Semiconductor quantum dots (QDs) exhibit unique properties, such as superior tuneability and sensitivity, due to their three-dimensional quantum confinement. These features make them particularly attractive for optoelectronic applications, such as lasers, solar cells and photodetectors. Over the last 20 years, quantum dot devices have exceeded the performance and functionality of previous devices.
Professor Huiyun Liu and fellow researchers from University College London (UCL) have written a topical review recently published in JPhysD, which discusses the developments within the last few years of quantum dot optoelectronic devices, including significant progress which has been achieved in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells.
The historical development of heterostructure lasers showing the record threshold current densities at the time of publication from Jiang Wu et al 2015 J. Phys. D: Appl. Phys. 48 363001
This work is licensed under a Creative Commons Attribution 3.0 Unported License
Front image: Quantum dots by Wikimedia Commons published under a CC BY-SA 3.0 license.
Article image: Jiang Wu et al 2015 J. Phys. D: Appl. Phys. 48 363001. Copyright IOP Publishing 2015.
Categories: Journal of Physics D: Applied Physics
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