Image of the week: exploring surface-melting-induced-faceting in semiconductors

This week our image comes from L Persichetti et al who explore the controversial and heavily disputed structural transformation in Ge (0 0 1).

In their paper, they use scanning tunneling microscopy to study the phase transition of Ge (0 0 1) in order to better understand the complex nanscopic mechanisms at play.

 

Image of the week - Ge STM surface images x4

Large-scale STM images of the nominal Ge(0 0 1) surface after few seconds flash annealing to 1170 K. L Persichetti et al 2015 J. Phys.: Condens. Matter 27 435001.

To find out what drives the phase transition in Ge (0 0 1); dimer breakup or step/ domain wall proliferation, you can read the full results here.


CC-BY logo  This work is licensed under a Creative Commons Attribution 3.0 Unported License.

Thumbnail image (adapted) and full size image are both taken from K. L Persichetti et al 2015 J. Phys.: Condens. Matter 27 435001. Copyright IOP Publishing 2015.



Categories: Journal of Physics: Condensed Matter

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