Tilted-view SEM images of a GaN/InGaN microdisk with radius of 3.5 µm. (a) Before KOH wet-etch and on Si pedestals with radii of (b) 1.75 µm, (c) 1.05 µm and (d) 0.35 µm. The scale bars represent 2 µm. Image taken from Yiyun Zhang et al 2016 J. Phys. D: Appl. Phys. 49 375103. © IOP Publishing, All Rights Reserved.
This week’s image of the week is taken from a recent paper in Journal of Physics D: Applied Physics from researchers at the University of Hong Kong, Nanjing University of Posts and Telecommunications and the University of Sheffield. The image is a tilted Scanning Electron Micrograph (SEM) of a GaN/InGaN microdisk with radius of 3.5 µm. The authors investigate the effect of strain on the photoluminescent emission of these microstructures, which we can’t help but think resemble “micromushrooms”!
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Image taken from Yiyun Zhang et al 2016 J. Phys. D: Appl. Phys. 49 375103, © IOP Publishing, All Rights Reserved.
Categories: Journal of Physics D: Applied Physics
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