Defects

Image of the week: defects in mesoporous silicas

By Tom Sharp on February 27, 2017

This weeks image comes from the JPCM special issue on Soft Quasicrystals

Figure 1: Formation energy of metal (left panels) and N (right panels) vacancies in c-MoN (upper panels) and c-TaN (lower panels), as a function of vacancy concentration and the degree of order characterised by a parameter α (for detailed explanation please see our paper). Image taken from Nikola Koutná et al 2016 J. Phys. D: Appl. Phys. 49 375303, © IOP Publishing, All Rights Reserved.

Point defects stabilise cubic Mo-N and Ta-N

By Dean Williams on September 6, 2016

Does ordering of vacancies and their type play any role on stability of MoN and TaN?

Image of the week: manipulating graphene

By Jade Holt on January 5, 2016

The first image of the week of 2016 comes from our recently published special issue on 2D semiconductors.