Photoemission

Reconciliation between atomic and electronic structure periodicity in Si(111)-7×7

By Andy Massey on July 13, 2017

For the first time, a 7×7 intensity modulation of electronic band structure has been observed in the 7×7–reconstructed Si(111) surface. Sheverdyaeva et al. give an account of their research published in Journal of Physics: Condensed Matter.

Tilted-view SEM images of a GaN/InGaN microdisk with radius of 3.5 µm. (a) Before KOH wet-etch and on Si pedestals with radii of (b) 1.75 µm, (c) 1.05 µm and (d) 0.35 µm. The scale bars represent 2 µm. Image taken from Yiyun Zhang et al 2016 J. Phys. D: Appl. Phys. 49 375103. © IOP Publishing, All Rights Reserved.

Image of the Week: GaN/InGaN microdisks, or “micromushrooms”

By Dean Williams on August 30, 2016

This week’s image of the week is taken from a recent paper in Journal of Physics D: Applied Physics from researchers at the University of Hong Kong, Nanjing University of Posts and Telecommunications and the University of Sheffield. The image… Read More ›

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Photoemission

Reconciliation between atomic and electronic structure periodicity in Si(111)-7×7

Image of the Week: GaN/InGaN microdisks, or “micromushrooms”