silicon

Image of the week: Coalescence of Pickering emulsions.

By Georgia Longstaff on September 18, 2017

This week’s Image of the Week is taken from JPhysD article Microfluidic angle of repose test for Pickering emulsions, L A Chacon and J C Baret 2017 J. Phys. D: Appl. Phys. 50 39LT04. In this paper the authors propose a microfluidic version of the… Read More ›

Band edges for intrinsic silicon dioxide (left panel) and intrinsic silicon (right panel) in contact with a hydrogen plasma. Inside the wall solid red (blue) curves are the edges of the conduction (valence) band while in front of it the curves give the potential energy for an electron (ion). Dashed blue curves indicate the edges for the valence band holes. Distances from the interface at z=0 are measured in the wall's (plasma's) electron Debye screening length. The profiles inside the light grey regions have no direct physical meaning. They arise from implementing technically the physical boundary conditions for the double layer responsible for the band bending. The electron (ion) temperature of the plasma is 2 eV (0.2 eV). Image taken from Franz X Bronold and Holger Fehske 2017 J. Phys. D: Appl. Phys. 50 294003 © IOP Publishing, All Rights Reserved.

Electronic response of a plasma-facing dielectric solid

By Georgia Longstaff on August 25, 2017

Towards a microscopic understanding of the transfer of the plasma’s electronic non-equilibrium to a solid.

Reconciliation between atomic and electronic structure periodicity in Si(111)-7×7

By Andy Massey on July 13, 2017

For the first time, a 7×7 intensity modulation of electronic band structure has been observed in the 7×7–reconstructed Si(111) surface. Sheverdyaeva et al. give an account of their research published in Journal of Physics: Condensed Matter.

A Plasmon’s Life in Atomic Wires

By Tom Sharp on November 30, 2016

Are plasmons hosted in atomically thin metallic wires a possible solution for future waveguides?

Remarkable thermodynamic loci in supercritical Si

By Tom Sharp on November 25, 2016

Expanded Wang-Landau simulations reveal the ideality contours spanning supercritical Si.

A new two-dimensional material

By Tom Sharp on July 14, 2016

Combining silica (SiO2) with silicon-carbide (Si2C3) to produce a new porous film – Silicatene

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